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HANBit
HMF1M32F8
Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design Part No. HMF1M32F8 GENERAL DESCRIPTION
The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2 , /CE_LL2) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible.
FEATURES
w Access time: 55, 70, 90, 120ns
w High-density 4MByte design w High-reliability, low-power design w Single + 5V 0.5V power supply w Easy memory expansion w All in/outputs are TTL-compatible w FR4-PCB design w 100-pin Designed by 50-pin Fine Pitch Connector w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 -55 -70 -90 -120 18 19 20 90ns access 120ns access w Packages 100-pin SMM F 21 22 23 24 25
URL: www.hbe.co.kr REV.02 (August,2002)
PIN ASSIGNMENT
P1 Symbol Vcc NC /CE_LL1 /CE_LM1 DQ15 DQ14 DQ13 Vss DQ12 DQ11 DQ10 DQ8 Vss DQ6 DQ4 DQ3 DQ2 Vss DQ1 DQ0 A0 A1 A2 A3 Vcc PIN 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol Vcc /CE_LL2 /CE_LM2 A18 A17 A16 A15 Vss A14 A13 DQ9 DQ7 Vss DQ5 A12 A11 A10 Vss A9 A8 A7 A6 A5 A4 Vcc PIN 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 Symbol Vcc NC /CE_UM1 /CE_UU1 DQ31 DQ30 DQ29 Vss /OE /WE NC NC Vss NC NC DQ28 DQ27 Vss DQ26 DQ25 DQ24 DQ23 Vss NC Vcc P2 PIN 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 Symbol Vcc /CE_UM2 /CE_UU2 DQ22 DQ21 DQ20 DQ19 Vss DQ18 DQ17 DQ16 NC Vss NC NC NC NC Vss NC NC NC NC Vss NC Vcc
OPTIONS
w Timing 55ns access 70ns access
MARKING
1
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FUNCTIONAL BLOCK DIAGRAM
HMF1M32F8
32 DQ 0-DQ31 A0-18 A0-A18 19
A0-18
A0-18 DQ0-7
DQ0-7
DQ0-7 /WE /OE /CE
/CE-LL2
DQ0-7
/WE
/OE
U1
/CE
U5
/CE-LL1
A0-18 /WE /OE /CE
/CE-LM1
DQ8-15
A0-18 DQ0-7 /WE /OE /CE
/CE-LM2
DQ8-15
DQ0-7
U2
U6
A0-18 DQ 0-7 /WE /OE /CE
/CE-UM1
DQ16-23
A0-18 DQ0-7 /WE /OE /CE
/CE-UM2
DQ16-23
U3
U7
A0-18 /WE
/OE
DQ0-7
DQ24-31
A0-18 /WE /OE DQ0-7 /WE /OE /CE
DQ24-31
/WE /OE /CE
U4
U8
/CE-UU1
/CE-UU2
URL: www.hbe.co.kr REV.02 (August,2002)
2
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HANBit TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don't care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D
HMF1M32F8
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG RATING -2.0V to +7.0V -2.0V to +7.0V 8W -65oC to +125oC
Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 5% device Supply Voltages Vcc for 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0
DC AND OPERATING CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage
URL: www.hbe.co.kr REV.02 (August,2002)
TEST CONDITIONS Vcc=Vcc max, VIN= VSS to Vcc Vcc=Vcc max, VOUT= VSS to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, /CE = VIL, /OE=VIH /CE= VIH
SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 VLKO
MIN
MAX 1.0 1.0
UNITS A A V
2.4 0.45 30 40 1.0 3.2 4.2
V mA mA mA V
3
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Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max
HMF1M32F8
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time LIMITS TYP. 1 7 3.6 MAX. 8 300 10.8 sec s sec Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS
CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance
o
TEST SETUP VIN = 0 VOUT = 0 VIN = 0
TYP. 6 8.5 7.5
MAX 7.5 12 9
UNIT pF pF pF
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC STANDARD TAVAV TAVQV TELQV TGLQV TEHQZ TGHQZ TAXQX Notes tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = VIL /OE = VIL /OE = VIL Min Max Max Max Max DESCRIPTION TEST SETUP -55 55 55 55 30 18 18 Min 0 Speed Options -70 70 70 70 30 20 20 0 -90 90 90 90 35 20 20 0 -120 120 120 120 50 30 30 0 ns ns ns ns ns ns ns UNIT
: Test Conditions
Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns, In case of 55ns-5ns Input pulse levels : 0.45V to 2.4V, In case of 55ns- 0.0V-3.0V
URL: www.hbe.co.kr REV.02 (August,2002)
4
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Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V 5.0V
HMF1M32F8
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS JEDEC TAVAV TAVWL TWLAX TDVWH TWHDX STANDARD tWC tAS tAH tDS tDH tOES TGHWL tGHWL Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write TELWL TWHEH TWLWH tWHWL tWHWH1 tWHWH2 tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS
URL: www.hbe.co.kr REV.02 (August,2002)
Speed Options DESCRIPTION -55 Min Min Min Min Min Min Min 40 25 45 30 0 0 0 55 -70 70 0 45 45 50 50 -90 90 -120 120 ns ns ns ns ns ns ns UNIT
/CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time
Min Min Min Min Typ Typ Min 30 35
0 0 45 20 7 1 50 50
ns ns ns ns s sec s
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5
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Notes : 1. Not 100% tested. 2. See the "Erase And Programming Performance" section for more information.
HMF1M32F8
u Erase/Program Operations Alternate /CE Controlled Writes
PARAMETER SYMBOLS JEDEC tAVAV tAVEL tELAX tDVEH tEHDX tGHEL STANDARD tWC tAS tAH tDS tDH tGHEL Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tWS tWH tCP tCPH tWHWH1 tWHWH2 /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Typ Typ 30 20 35 20 7 1 0 0 45 20 50 20 ns ns ns ns s sec Min Min Min Min Min Min 40 25 45 30 0 0 DESCRIPTION -55 55 -70 70 0 45 45 50 50 -90 90 -120 120 UNIT ns ns ns ns ns ns ns
Notes : 1. Not 100% tested. 2. See the "Erase And Programming Performance" section for more information.
URL: www.hbe.co.kr REV.02 (August,2002)
6
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u READ OPERATIONS TIMING
HMF1M32F8
u RESET TIMING
URL: www.hbe.co.kr REV.02 (August,2002)
7
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u PROGRAM OPERATIONS TIMING
HMF1M32F8
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02 (August,2002)
8
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF1M32F8
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02 (August,2002)
9
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF1M32F8
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02 (August,2002)
10
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HANBit PACKAGE DIMENSIONS
HMF1M32F8
ORDERING INFORMATION
Part Number HMF1M32F8-55 HMF1M32F8-70 HMF1M32F8-90 HMF1M32F8-120 Density 4MByte 4MByte 4MByte 4MByte Org. 1Mx 32 1Mx 32 1Mx 32 1Mx 32 Package 100 PinSMM 100 PinSMM 100 PinSMM 100 PinSMM Component Number 8EA 8EA 8EA 8EA Vcc 5.0V 5.0V 5.0V 5.0V SPEED 55ns 70ns 90ns 120ns
URL: www.hbe.co.kr REV.02 (August,2002)
11
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